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X Author: J. Melngailis
2005
Ma, Z., F. Zavaliche, L. Chen, J. Ouyang, J. Melngailis, A.L. Roytburd, V. Vaithyanathan, D.G. Schlom, T. Zhao, and Ramamoorthy Ramesh."Effect of 90° domain movement on the piezoelectric response of patterned PbZr 0.2 Ti 0.8 O 3 SrTiO 3 Si heterostructures."Applied Physics Letters
87 (2005). DOI
2003
Nagarajan, V., A. Roytburd, A. Stanishevsky, S. Prasertchoung, T. Zhao, L. Chen, J. Melngailis, O. Auciello, and Ramamoorthy Ramesh."Dynamics of ferroelastic domains in ferroelectric thin films."Nature Materials
2 (2003) 43-47. DOI
2002
Stanishevsky, A., B. Nagaraj, J. Melngailis, Ramamoorthy Ramesh, L. Khriachtchev, and E. McDaniel."Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors."Journal of Applied Physics
92 (2002) 3275-3278. DOI
Nagarajan, V., A. Stanishevsky, L. Chen, T. Zhao, B.-T. Liu, J. Melngailis, A.L. Roytburd, Ramamoorthy Ramesh, J. Finder, Z. Yu, R. Droopad, and K. Eisenbeiser."Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si."Applied Physics Letters
81 (2002) 4215-4217. DOI
2001
Ganpule, C.S., A.L. Roytburd, V. Nagarajan, A. Stanishevsky, J. Melngailis, E.D. Williams, and Ramamoorthy Ramesh."Nanoscale electromechanical phenomena in ferroelectric thin films."Materials Research Society Symposium - Proceedings
655 (2001) XVI-XVII.
2000
Aggarwal, S., C. Ganpule, I.G. Jenkins, B. Nagaraj, A. Stanishevsky, J. Melngailis, E. Williams, and Ramamoorthy Ramesh."High density ferroelectric memories: Materials, processing and scaling."Integrated Ferroelectrics
28 (2000) 213-225. DOI
Steinhauer, D.E., C.P. Vlahacos, F.C. Wellstood, S.M. Anlage, C. Canedy, Ramamoorthy Ramesh, A. Stanishevsky, and J. Melngailis."Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope."Review of Scientific Instruments
71 (2000) 2751-2758. DOI
1999
Steinhauer, D.E., C.P. Vlahacos, F.C. Wellstood, S.M. Anlage, C. Canedy, Ramamoorthy Ramesh, A. Stanishevsky, and J. Melngailis."Imaging of microwave permittivity, tunability, and damage recover in (Ba, Sr)TiO3 thin films."Applied Physics Letters
75 (1999) 3180-3182. DOI
Ganpule, C.S., A. Stanishevsky, S. Aggarwal, J. Melngailis, E. Williams, Ramamoorthy Ramesh, V. Joshi, and Paz De Araujo."Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films."Applied Physics Letters
75 (1999) 3874-3876. DOI
Ganpule, C.S., A. Stanishevsky, Q. Su, S. Aggarwal, J. Melngailis, E. Williams, and Ramamoorthy Ramesh."Scaling of ferroelectric properties in thin films."Applied Physics Letters
75 (1999) 409-411. DOI
1998
Stanishevsky, A., S. Aggarwal, A.S. Prakash, J. Melngailis, and Ramamoorthy Ramesh."Focused ion-beam patterning of nanoscale ferroelectric capacitors."Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
16 (1998) 3899-3902.
1996
Chen, C.-H., V. Talyansky, C. Kwon, M. Rajeswari, R.P. Sharma, Ramamoorthy Ramesh, T. Venkatesan, J. Melngailis, Z. Zhang, and W.K. Chu."Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3."Applied Physics Letters
69 (1996) 3089-3091. DOI