High density ferroelectric memories: Materials, processing and scaling
Publication Type
Journal Article
Authors
Aggarwal, S., C. Ganpule, I.G. Jenkins, B. Nagaraj, A. Stanishevsky, J. Melngailis, E. Williams, Ramamoorthy Ramesh
DOI
Abstract
A review is presented of approaches to integrate thin film Pb(Zr,Ti)O3-based ferroelectric capacitor structures on a filled poly-Si plug, which is a critical requirement for a high-density memory technology. Key materials issues relevant to the development of conducting diffusion barrier layers for integration of these materials on Si wafers are discussed. Specific attention in this paper is on the use of conducting perovskite oxide electrodes to contact the ferroelectric thin film. The second part of this review focuses on some novel materials that we have investigated for use as diffusion barriers. Finally, we present data on the scaling of ferroelectric properties with lateral dimensions of the capacitor. © 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
Journal
Integrated Ferroelectrics
Volume
28
Year of Publication
2000
ISSN
10584587
Notes
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