Publications

X Author: Eicke R. Weber

2001

Huang, Michael H., Samuel S. Mao, Henning Feick, Haoquan Yan, Yiying Wu, Hannes Kind, Eicke R. Weber, Richard E. Russo, and Peidong Yang."Room-temperature ultraviolet nanowire nanolasers."Science 292.5523 (2001) 1897-1899. DOI(link is external)

1997

Leung, Michael S.H., Ralf Klockenbrink, Christian F. Kisielowski, Hiroaki Fujii, Joachim Krüger, Sudhir G. Subramanya, André Anders, Zuzanna Liliental-Weber, Michael D. Rubin, Eicke R. Weber, and Joachim Krüger."Pressure Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source."Materials Research Society Proceedings 449.221 (1997). DOI(link is external)

1996

Kisielowski, Christian F., Joachim Krüger, Sergei Ruvimov, Tadeusz Suski, Joel W. Ager III, Erin C. Jones, Zuzanna Liliental-Weber, Michael D. Rubin, Eicke R. Weber, Michael D. Bremser, Robert F. Davis, and Joachim Krüger."Strain Related Phenomena in GaN Thin Films."Physical Review B 54.24 (1996) 17745-17753. DOI(link is external)
Fujii, Hiroaki, Christian F. Kisielowski, Joachim Krüger, Michael S.H. Leung, Ralf Klockenbrink, Michael D. Rubin, Eicke R. Weber, and Joachim Krüger."Impact of Growth Temperature, Pressure and Strain on the Morphology of GaN Films."Materials Research Society Symposium N – III-V Nitrides 449 (1996) 227. DOI(link is external)
Kisielowski, Christian F., Joachim Krüger, Michael S.H. Leung, Ralf Klockenbrink, Hiroaki Fujii, Tadeusz Suski, Sudhir G. Subramanya, Joel W. Ager III, Michael D. Rubin, Eicke R. Weber, and Joachim Krüger."Origin of Strain in GaN Thin Films."23rd International Conference on the Physics of Semiconductors 4 (1996) 513.

1995

Chan, James S., Nathan W. Cheung, Lawrence F. Schloss, Erin C. Jones, William S. Wong, Nathan Newman, Xiaohong Liu, Eicke R. Weber, A. Gassman, and Michael D. Rubin."Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films."Applied Physics Letters 68.19 (1995) 2702-2704. DOI(link is external)
Fu, T.C., Nathan Newman, Erin C. Jones, James S. Chan, Xiaohong Liu, Michael D. Rubin, Nathan W. Cheung, and Eicke R. Weber."The Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy."Journal of Electronic Materials 24.4 (1995) 249-255. DOI(link is external)

1994

Newman, Nathan, T.C. Fu, Z. Liu, Zuzanna Liliental-Weber, Michael D. Rubin, James S. Chan, Erin C. Jones, Jennifer T. Ross, Ian M. Tidswell, Kin Man Yu, Nathan W. Cheung, and Eicke R. Weber."Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy." (1994).