Publications
X Author: Nathan Newman
1995
Chan, James S., Nathan W. Cheung, Lawrence F. Schloss, Erin C. Jones, William S. Wong, Nathan Newman, Xiaohong Liu, Eicke R. Weber, A. Gassman, and Michael D. Rubin."Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films."Applied Physics Letters
68.19 (1995) 2702-2704. DOI
Fu, T.C., Nathan Newman, Erin C. Jones, James S. Chan, Xiaohong Liu, Michael D. Rubin, Nathan W. Cheung, and Eicke R. Weber."The Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy."Journal of Electronic Materials
24.4 (1995) 249-255. DOI
1994
Newman, Nathan, T.C. Fu, Z. Liu, Zuzanna Liliental-Weber, Michael D. Rubin, James S. Chan, Erin C. Jones, Jennifer T. Ross, Ian M. Tidswell, Kin Man Yu, Nathan W. Cheung, and Eicke R. Weber."Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy."
(1994).
1993
Chan, James S., T.C. Fu, Nathan W. Cheung, Jennifer T. Ross, Nathan Newman, and Michael D. Rubin."Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy."Materials Research Society
300 (1993).
Ross, Jennifer T., Michael D. Rubin, X. Yao, Nathan Newman, and Amy Moll."Ion Implantation of Mg and C into GaN Films Grown by Ion-Assisted MBE."
(1993).
Rubin, Michael D., Nathan Newman, James S. Chan, T.C. Fu, and Jennifer T. Ross."P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg."Applied Physics Letters
64.1 (1993) 64-66. DOI
1992
Newman, Nathan, Jennifer T. Ross, and Michael D. Rubin."Thermodynamic and Kinetic Processes Involved in the Growth of Epitaxial GaN Thin Films."Applied Physics Letters
62 (1992) 1242.