Publications
X Author: H.N. Al-Shareef
1996
Warren, W.L., B.A. Tuttle, D. Dimos, G.E. Pike, H.N. Al-Shareef, Ramamoorthy Ramesh, and J.T. Jr.."Imprint in ferroelectric capacitors."Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35 (1996) 1521-1524.
Warren, W.L., G.E. Pike, D. Dimos, K. Vanheusden, H.N. Al-Shareef, B.A. Tuttle, Ramamoorthy Ramesh, and J.T. Jr.."Voltage shifts and defect-dipoles in ferroelectric capacitors."Materials Research Society Symposium - Proceedings
433 (1996) 257-266.
1995
Tuttle, B.A., H.N. Al-Shareef, W.L. Warren, M.V. Raymond, T.J. Headley, J.A. Voigt, J. Evans, and Ramamoorthy Ramesh."La0.5Sr0.5CoO3 electrode technology for Pb(Zr,Ti)O3 thin film nonvolatile memories."Microelectronic Engineering
29 (1995) 223-230. DOI
1994
Auciello, Orlando, H.N. Al-Shareef, K.D. Gifford, D.J. Lichtenwalner, R. Dat, K.R. Bellur, A.I. Kingon, and Ramamoorthy Ramesh."Review of orientation-microstructure-property relationships for PZT/metal or metal-oxide layered heterostructures."Materials Research Society Symposium - Proceedings
341 (1994) 341-353.