Publications

X Author: A.M. Dhote

2002

Auciello, O., A.M. Dhote, Ramamoorthy Ramesh, B.T. Liu, S. Aggarwal, A.H. Mueller, N.A. Suvarova, and E.A. Irene."Development of materials integration strategies for electroceramic film-based devices via complementary in situ and ex situ studies of film growth and interface processes."Integrated Ferroelectrics 46 (2002) 295-306. DOI
Liu, B.T., K. Maki, S. Aggarwal, B. Nagaraj, V. Nagarajan, L. Salamanca-Riba, Ramamoorthy Ramesh, A.M. Dhote, and O. Auciello."Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer."Applied Physics Letters 80 (2002) 3599-3601. DOI

2001

Krauss, A.R., O. Auciello, A.M. Dhote, J. Im, S. Aggarwal, Ramamoorthy Ramesh, E.A. Irene, Y. Gao, and A.H. Mueller."Studies of ferroelectric film growth and capacitor interface processes via in situ analytical techniques and correlation with electrical properties."Integrated Ferroelectrics 32 (2001) 121-131.
Dhote, A.M., O. Auciello, D.M. Gruen, and Ramamoorthy Ramesh."Studies of thin film growth and oxidation processes for conductive Ti-Al diffusion barrier layers via in situ surface sensitive analytical techniques."Applied Physics Letters 79 (2001) 800-802. DOI

2000

Aggarwal, S., B. Nagaraj, I.G. Jenkins, H. Li, R.P. Sharma, L. Salamanca-Riba, Ramamoorthy Ramesh, A.M. Dhote, A.R. Krauss, and O. Auciello."Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories."Acta Materialia 48 (2000) 3387-3394. DOI

1999

Aggarwal, S., A.M. Dhote, H. Li, S. Ankem, and Ramamoorthy Ramesh."Conducting barriers for vertical integration of ferroelectric capacitors on Si."Applied Physics Letters 74 (1999) 230-232. DOI
Madhukar, S., S. Aggarwal, A.M. Dhote, Ramamoorthy Ramesh, S.B. Samavedam, S. Choopun, and R.P. Sharma."Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology."Journal of Materials Research 14 (1999) 940-947.
Dhote, A.M., A.R. Krauss, O. Auciello, J. Im, D.M. Gruen, Ramamoorthy Ramesh, S.P. Pai, and T. Venkatesan."Studies of metallic species incorporation during growth of SrBi2Ta2O9 films on YBa2Cu3O7-x substrates using mass spectroscopy of recoiled ions."Materials Research Society Symposium - Proceedings 541 (1999) 281-286.

1998

Aggarwal, S., A.S. Prakash, T.K. Song, S. Sadashivan, A.M. Dhote, B. Yang, Ramamoorthy Ramesh, Y. Kisler, and S.E. Bernacki."Lead based ferroelectric capacitors for low voltage non-volatile memory applications."Integrated Ferroelectrics 19 (1998) 159-177. DOI
Im, J., A.R. Krauss, A.M. Dhote, D.M. Gruen, O. Auciello, Ramamoorthy Ramesh, and R.P.H. Chang."Studies of metallic species and oxygen incorporation during sputter-deposition of SrBi2Ta2O9 films, using mass spectroscopy of recoiled ions."Applied Physics Letters 72 (1998) 2529-2531. DOI

1997

Madhukar, S., S. Aggarwal, A.M. Dhote, Ramamoorthy Ramesh, A. Krishnan, D. Keeble, and E. Poindexter."Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes."Journal of Applied Physics 81 (1997) 3543-3547. DOI
Yang, B., S. Aggarwal, A.M. Dhote, T.K. Song, Ramamoorthy Ramesh, and J.S. Lee."La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.68)O3/La0.5Sr 0.5CoO3 thin film heterostructures on Si using TiN/Pt conducting barrier."Applied Physics Letters 71 (1997) 356-358. DOI
Dhote, A.M., S. Madhukar, D. Young, T. Venkatesan, Ramamoorthy Ramesh, C.M. Cotell, and J.M. Benedetto."Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack."Journal of Materials Research 12 (1997) 1589-1594. DOI

1996

Dhote, A.M., S. Madhukar, W. Wei, T. Venkatesan, Ramamoorthy Ramesh, and C.M. Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters 68 (1996) 1350-1352. DOI
Aggarwal, S., A.M. Dhote, Ramamoorthy Ramesh, W.L. Warren, G.E. Pike, D. Dimos, M.V. Raymond, B.A. Tuttle, and J.T. Jr.."Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes."Applied Physics Letters 69 (1996) 2540-2542. DOI
Wei, W., A.M. Dhote, Ramamoorthy Ramesh, and S. Sauvage."Reliability studies of polycrystalline La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O capacitors on silicon."Integrated Ferroelectrics 12 (1996) 53-62. DOI

1995

Dhote, A.M., S. Madhukar, W. Wei, T. Venkatesan, Ramamoorthy Ramesh, and C.M. Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters (1995) 1350. DOI