Galvanomagnetic properties of epitaxial MnAl films on GaAs

Journal Article

Leadbeater, M.L., S.J. Jr., F. Derosa, J.P. Harbison, T. Sands, Ramamoorthy Ramesh, L.T. Florez, V.G. Keramidas

10.1063/1.348298

Single-crystal films of τ-MnAl are grown by molecular-beam epitaxy on GaAs substrates. The extraordinary Hall effect shows a large hysteresis loop, and the magnetization is found to have a substantial component perpendicular to the plane of the film.

Journal of Applied Physics

69

1991

00218979

cited By 49

Ramesh Lab