Publications
X Author: Jennifer T. Ross
1994
Newman, Nathan, T.C. Fu, Z. Liu, Zuzanna Liliental-Weber, Michael D. Rubin, James S. Chan, Erin C. Jones, Jennifer T. Ross, Ian M. Tidswell, Kin Man Yu, Nathan W. Cheung, and Eicke R. Weber."Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy."
(1994).
1993
Chan, James S., T.C. Fu, Nathan W. Cheung, Jennifer T. Ross, Nathan Newman, and Michael D. Rubin."Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy."Materials Research Society
300 (1993).
Ross, Jennifer T., Michael D. Rubin, X. Yao, Nathan Newman, and Amy Moll."Ion Implantation of Mg and C into GaN Films Grown by Ion-Assisted MBE."
(1993).
Rubin, Michael D., Nathan Newman, James S. Chan, T.C. Fu, and Jennifer T. Ross."P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg."Applied Physics Letters
64.1 (1993) 64-66. DOI
1992
Ross, Jennifer T., Michael D. Rubin, and Ture K. Gustafson."Crystalline Growth of Wurtzite GAN on (111) GaAs."Materials Research Society Symposium
242 (1992) 457. DOI
Newman, Nathan, Jennifer T. Ross, and Michael D. Rubin."Thermodynamic and Kinetic Processes Involved in the Growth of Epitaxial GaN Thin Films."Applied Physics Letters
62 (1992) 1242.
1991
Ross, Jennifer T., Michael D. Rubin, and Ture K. Gustafson."Single Crystal Wurtzite GaN on (111) GaAs with AIN Buffer Layers Grown by Reactive Magnetron Sputter Deposition."Journal of Materials Research
8.10 (1991) 2613-2616.
Ross, Jennifer T., and Michael D. Rubin."High Quality GaN Grown by Reactive Sputtering."Mater. Lett
12 (1991) 215.