Publications
X Author: J.M. Benedetto
1997
Dhote, A.M., S. Madhukar, D. Young, T. Venkatesan, Ramamoorthy Ramesh, C.M. Cotell, and J.M. Benedetto."Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack."Journal of Materials Research
12 (1997) 1589-1594. DOI
1995
Benedetto, J.M., I.K. Lloyd, and Ramamoorthy Ramesh."The Temperature Dependence of Ferroelectric Imprint."Integrated Ferroelectrics
10 (1995) 279-288. DOI
1994
Benedetto, J.M., M.L. Roush, I.K. Lloyd, Ramamoorthy Ramesh, and Anon."Imprint of ferroelectric PLZT thin-film capacitors with lanthanum strontium cobalt oxide electrodes."IEEE International Symposium on Applications of Ferroelectrics
(1994) 66-69.