Publications

X Author: A.R. Krauss

2001

Krauss, A.R., O. Auciello, A.M. Dhote, J. Im, S. Aggarwal, Ramamoorthy Ramesh, E.A. Irene, Y. Gao, and A.H. Mueller."Studies of ferroelectric film growth and capacitor interface processes via in situ analytical techniques and correlation with electrical properties."Integrated Ferroelectrics 32 (2001) 121-131.

2000

Aggarwal, S., B. Nagaraj, I.G. Jenkins, H. Li, R.P. Sharma, L. Salamanca-Riba, Ramamoorthy Ramesh, A.M. Dhote, A.R. Krauss, and O. Auciello."Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories."Acta Materialia 48 (2000) 3387-3394. DOI
Auciello, O., A.R. Krauss, J. Im, A. Dhote, D.M. Gruen, E.A. Irene, Y. Gao, A.H. Mueller, and Ramamoorthy Ramesh."Studies of ferroelectric heterostructure thin films and interfaces, via in situ analytical techniques."Integrated Ferroelectrics 28 (2000) 1-12. DOI

1999

Auciello, O., A.R. Krauss, I.M. Jaemo, A. Dhote, D.M. Gruen, S. Aggarwal, Ramamoorthy Ramesh, E.A. Irene, Y. Gao, and A.H. Mueller."Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques."Integrated Ferroelectrics 27 (1999) 103-118. DOI
Krauss, A.R., A. Dhote, O. Auciello, J. Im, Ramamoorthy Ramesh, and S. Aggarwal."Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors."Integrated Ferroelectrics 27 (1999) 147-157. DOI
Dhote, A.M., A.R. Krauss, O. Auciello, J. Im, D.M. Gruen, Ramamoorthy Ramesh, S.P. Pai, and T. Venkatesan."Studies of metallic species incorporation during growth of SrBi2Ta2O9 films on YBa2Cu3O7-x substrates using mass spectroscopy of recoiled ions."Materials Research Society Symposium - Proceedings 541 (1999) 281-286.

1998

Im, J., A.R. Krauss, A.M. Dhote, D.M. Gruen, O. Auciello, Ramamoorthy Ramesh, and R.P.H. Chang."Studies of metallic species and oxygen incorporation during sputter-deposition of SrBi2Ta2O9 films, using mass spectroscopy of recoiled ions."Applied Physics Letters 72 (1998) 2529-2531. DOI