Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset

Journal Article

Friessnegg, T., S. Aggarwal, Ramamoorthy Ramesh, B. Nielsen, E.H. Poindexter, D.J. Keeble

10.1063/1.126898

Vacancy-related defect profiles have been measured for La0.5Sr0.5CoO3/(Pb0.9La 0.1) × (Zr0.2Ti0.8)O3/La0.5Sr 0.5CoO3 ferroelectric capacitors using a variable-energy positron beam. By varying the layer thickness and the postgrowth processing in a reducing ambient, a capacitor showing oxygen deficiency dominantly in the top electrode and one with deficiency in both electrodes were produced. The capacitor with an asymmetric defect profile showed a voltage offset polarization-voltage hysteresis loop, that with a symmetric distribution of vacancy-related defects showed no offset. These results are discussed in the context of current models for imprint. © 2000 American Institute of Physics.

Applied Physics Letters

77

2000

00036951

cited By 119

Ramesh Lab