Superconducting thin films on Si. HTSCs meet VLSI

Journal Article

Inam, A., X.D. Wu, T. Venkatesan, D.M. Hwang, C.C. Chang, Ramamoorthy Ramesh, S. Miura, S. Matsubara, Y. Miyasaka, N. Shohata

The integration of high temperature superconductors (HTSCs) with conventional semiconductor-based technology would have important consequences for micro-electronics, with the promise of high performance hybrid circuits incorporating the best of what superconductors and semiconductors have to offer as well as the possibility for novel devices. Adding to the well known advantages of semiconductors, passive superconductive elements such as transmission lines offer the possibility of low loss, dispersionless signal transmission while active devices such as Josephson junctions make it possible to achieve very fast switching speeds with limited generation of heat. Film growth issues that limit the quality of (high temperature superconductor) HTSC thin films deposited directly on Si are discussed. Promising initial results-using intermediate (buffer) layers-represent a major step towards complete integration of HTSCs with Si and VLSI technology.

Solid State Technology

33

1990

0038111X

cited By 16

Ramesh Lab