Optical band gap of BiFe O3 grown by molecular-beam epitaxy

Journal Article

Ihlefeld, J.F., N.J. Podraza, Z.K. Liu, R.C. Rai, X. Xu, T. Heeg, Y.B. Chen, , J. Li, R.W. Collins, J.L. Musfeldt, X.Q. Pan, J. Schubert, Ramamoorthy Ramesh, D.G. Schlom

10.1063/1.2901160

BiFe O3 thin films have been deposited on (001) SrTi O3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFe O3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with ω rocking curve full width at half maximum values as narrow as 29 arc sec (0.008°). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFe O3 films. © 2008 American Institute of Physics.

Applied Physics Letters

92

2008

00036951

cited By 256

Ramesh Lab