Non-volatile memory based on the ferroelectric

Journal Article

Guo, R., L. You, Y. Zhou, Z.S. Lim, X. Zou, L. Chen, Ramamoorthy Ramesh, J. Wang

10.1038/ncomms2990

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ∼10 μs programming and ∼10 ms erasing time. Furthermore, it can only withstand ∼105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO 3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. © 2013 Macmillan Publishers Limited. All rights reserved.

Nature Communications

4

2013

20411723

cited By 218

Ramesh Lab