Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO 3 films for memory applications

Journal Article

Yang, S.Y., F. Zavaliche, L. Mohaddes-Ardabili, V. Vaithyanathan, D.G. Schlom, Y.J. Lee, Y.H. Chu, M.P. Cruz, Q. Zhan, T. Zhao, Ramamoorthy Ramesh

10.1063/1.2041830

We have grown BiFeO3 thin films on SrRuO3 SrTiO3 and SrRuO3 SrTiO3 Si using liquid delivery metalorganic chemical vapor deposition. Epitaxial BiFeO3 films were successfully prepared through the systematic control of the chemical reaction and deposition process. We found that the film composition and phase equilibrium are sensitive to the Bi:Fe ratio in the precursor. Fe-rich mixtures show the existence of α- Fe2 O3, while Bi-rich mixtures show the presence of Β- Bi2 O3 as a second phase at the surface. In the optimized films, we were able to obtain an epitaxial single perovskite phase thin film. Electrical measurements using both quasistatic hysteresis and pulsed polarization measurements confirm the existence of ferroelectricity with a switched polarization of 110-120 μC cm2, ΔP (= P* - P ∧). Out-of plane piezoelectric (d33) measurements using an atomic force microscope yield a value of 50-60 pmV. © 2005 American Institute of Physics.

Applied Physics Letters

87

2005

00036951

cited By 216

Ramesh Lab