Ferroelectric properties and reliability of La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on si for nonvolatile memory applications

Journal Article

Lee, J., Ramamoorthy Ramesh, V.G. Keramidas, O. Auciello

10.1080/10584589508012570

Highly oriented La-Sr-Co-0(LSCO)/Pb-La-Zr-Ti-0(PLZT)/La-Sr-Co-O heterostructures have been successfully grown on a highly oriented Pt film which was grown on a thermally oxidized Si (SiO2/Si) substrate. The growth of oriented Pt film on the SiO2/Si substrate was made possible through the use of a thin bismuth titanate template layer which is c-axis oriented on the SiO2/Si substrate. The hybrid LSCO/Pt structure effectively reduced the sheet resistance of the electrodes by at least 3-5 times compared with a single LSCO electrode. These ferroelectric PLZT capacitors on Si exhibited symmetric hysteresis loops with very desirable ferroelectric properties. The test capacitors showed reliable performance at both room and high (100°C) temperatures with respect to fatigue, retention, aging, and imprint, suggesting that they can be used as reliable, nonvolatile memory elements. © 1995, Taylor & Francis Group, LLC. All rights reserved.

Integrated Ferroelectrics

9

1995

10584587

cited By 4

Ramesh Lab