Epitaxial relations between in situ superconducting YBa2Cu 3O7-x thin films and BaTiO3/MgAl 2O4/Si substrates

Journal Article

Hwang, D.M., Ramamoorthy Ramesh, C.Y. Chen, X.D. Wu, A. Inam, M.S. Hegde, B. Wilkens, C.C. Chang, L. Nazar, T. Venkatesan, S. Miura, S. Matsubara, Y. Miyasaka, N. Shohata

10.1063/1.346607

In situ superconducting YBa2Cu3O7-x films with Tc0 up to 87 K and Jc, 77 K up to 6×10 4 A/cm2 were prepared on Si substrates with MgAl 2O4 and BaTiO3 double-buffer layers. The epitaxial relations between various layers were established by transmission electron microscopy. The MgAl2O4 layer is heavily faulted. The subsequent BaTiO3 layer stops most of the faults, provides a template for the YBa2Cu3O7-x growth, and partially screens off the stress due to different thermal expansion coefficients. The microstructure of the YBa2Cu3O 7-x layer is very similar to that of the films deposited directly on SrTiO3, exhibiting a homogeneous heavily faulted single-crystal-like structure free from secondary phases and grain boundaries. The slight degradation of the transport properties is attributed to residual thermal stress.

Journal of Applied Physics

68

1990

00218979

cited By 16

Ramesh Lab