Epitaxial BiFeO 3 thin films on Si
Publication Type
Journal Article
Authors
Wang, J., H. Zheng, Z. Ma, S. Prasertchoung, M. Wuttig, R. Droopad, J. Yu, K. Eisenbeiser, Ramamoorthy Ramesh
DOI
Abstract
The growth of epitaxial BiFeO 3 (BFO) thin films on Si substrate using pulsed laser deposition with SrTiO 3 (STO) as a template layer and SrRuO 3 (SRO) as a bottom electrode was investigated. The structure of the film was investigated using x-ray diffraction and transmission electron microscopy. It was observed that the value of spontaneous polarization of the films was ∼45 μC/Cm 2. The results show that the 400-nm-thick films has a large piezoelectric coefficient of ∼120 pm/V, which is useful to applications in actuators and microelectromechanical (MEMS) devices.
Journal
Applied Physics Letters
Volume
85
Year of Publication
2004
ISSN
00036951
Notes
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